BD263 transistor equivalent, silicon npn power transistor.
*Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Collector
–Emitter Breakdown Voltage—
: V(BR)CEO = 60V
*DC Current Gain—
: hFE = 750(Min) @ IC= 1.5 A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use .
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